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High Power Mosfet Transistors

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High Power Mosfet Transistors

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Product Details:

Place of Origin:	Morocco
Brand Name:	STMICROELECTRONICS
Certification:	Original Factory Pack
Model Number:	BTA16-600BRG

Payment & Shipping Terms:

Minimum Order Quantity:	100pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	8000PCS

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Detailed Product Description

RMS On-state Current:	16 A	Voltage:	600V 700V 800V
Value For Fusing:	144 A² S	Collector Current:	10 To 50 MA
Critical Rate Of Rise Of On-state Current:	50 A/µs	Storage Junction Temperature:	-40 To +150 ℃
Operating Junction Temperature:	-40 To +125 ℃	Package:	TO-220
High Light:	power mosfet ic , silicon power transistors

BTA16-600BRW 16A TRIACS Triacs Silicon Bidirectional Thyristors

Features

■ Medium current triac

■ Low thermal resistance with clip bonding

■ Low thermal resistance insulation ceramic for insulated BTA

■ High commutation (4Q) or very high commutation (3Q) capability

■ BTA series UL1557 certified (File ref: 81734)

■ Packages are RoHS ( 2002/95/EC) compliant High Power Mosfet Transistors

Applications

ON/OFF or phase angle function in applications such as static relays, light dimmers and appliance motors speed controllers. The snubberless versions (BTA/BTB...W and T12 series) are especially recommended for use on inductive loads, because of their high commutation performances.

The BTA series provides an insulated tab (rated at 2500 V RMS).

Description

Available either in through-hole or surface-mount packages, the BTA12, BTB12 and T12xx triac series is suitable for general purpose mains power AC switching.

Device summary

Symbol	Parameter	T12xx	BTA12 (1)	BTB12
IT(RMS)	RMS on-state current	12	12	12
VDRM/VRRM	Repetitive peak off-state voltage	600/800	600/800	600/800
IGT (Snubberless)	Triggering gate current	10/35/50	5/10/35/50	5/10/35/50
IGT (Standard)	Triggering gate current	-	35/50	35/50

Figure 1. Maximum power dissipation versus RMS on-state current (full cycle)

High Power Mosfet Transistors

Figure 2. RMS on-state current versus case temperature (full cycle)

High Power Mosfet Transistors

Packaging information

Epoxy meets UL94, V0 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.

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Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859