Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
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Drain-Source Voltage: | 500 V | Continuous Drain Current: | ±19 A |
---|---|---|---|
Pulsed Drain Current: | ±76 A | Gate-Source Voltage: | ±30 V |
Repetitive And Non-Repetitive Maximum Avalanche Current: | 19 A | Maximum Drain-Source DV/dt: | 20 KV/us |
Operating Temperature: | 150℃ | Storage ℃ Temperature Range: | -55 ~ +150℃ |
High Light: | multi emitter transistor,silicon power transistors |
Fuji Power MOSFET SuperFAP-G series Target Specification
2SK3683-01MR (500V/0.38Ω/19A)
1) Package TO-220F15R
2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)
Characteristics | Symbol | Rating | Unit | |
Drain−source voltage | VDS | 500 | V | |
Continuous Drain Current | ID | ±19 | A | |
Pulsed Drain Current | ID(pulse) | ±76 | A | |
Gate-Source Voltage | VGS | ±30 | V | |
Repetitive and Non-Repetitive Maximum Avalanche Current | IAR | 19 | A | |
Non-Repetitive Maximum Avalanche Energy | EAS | 245.3 | mJ *1 | |
Maximum Drain-Source dV/dt | dVDS/dt | 20 | kV/us | |
Peak Diode recovery dV/dt | dV/dt | 5 | kV/us *2 | |
Maximum Power Dissipation | PD @Tc=25℃ | 95 | W | |
PD @Ta=25℃ | 2.16 | W | ||
Operating and Storage Temperature range | Tch | 150 | ℃ | |
Tstg | -55 ~ +150 | ℃ |
Thermal Characteristics
Items | Symbols | Test Conditions | min. | typ. | max. | Units |
Channel to Case | Rth(ch-c) | 1.316 | ℃/W | |||
Channel to Ambient | Rth(ch-a) | 58.0 | ℃/W |
*1 L=1.25mH,Vcc=50V
*2 IF≤-ID,-di/dt=50A/µs,Vcc≤BVDSS,Tch≤150°C
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