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New & Original 50 mA Mosfet Power Module 40A TRIACS BTA40-600

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New & Original 50 mA Mosfet Power Module 40A TRIACS BTA40-600

: Large Image : New & Original 50 mA Mosfet Power Module 40A TRIACS BTA40-600

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	BTA40-600

Payment & Shipping Terms:

Minimum Order Quantity:	5pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	850pcs

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Detailed Product Description

IT(RMS):	40 A	VDRM/VRRM:	600 And 800 V
IGT (Q1):	50 MA	IGM:	8 A
PG(AV):	1 W	I T:	880 A S
High Light:	low voltage power mosfet , hybrid inverter circuit

40A TRIACS

MAIN FEATURES:

Symbol	Value	Unit
I_T(RMS)	40	A
V_DRM/V_RRM	600 and 800	V
I_{GT (Q1)}	50	mA

DESCRIPTION
Available in high power packages, the BTA/ BTB40-41 series is suitable for general purpose AC power switching. They can be used as an ON/ OFF function in applications such as static relays, heating regulation, water heaters, induction motor starting circuits, welding equipment... or for phase control operation in high power motor speed controllers, soft start circuits...

Thanks to their clip assembly technique, they provide a superior performance in surge current handling capabilities.

By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500 V RMS) complying with UL standards (File ref.: E81734).

**ABSOLUTE MAXIMUM RATINGS**
Symbol	Parameter			Value	Unit
I_T(RMS)	RMS on-state current (full sine wave)	RD91	Tc = 80°C	40	A
		TOP3	Tc = 80°C
		TOP3 Ins.	Tc = 70°C
I_TSM	Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C)	F = 60 Hz	t = 16.7 ms	420	A
I_TSM		F = 50 Hz	t = 20 ms	400	A
It	I t Value for fusing	tp = 10 ms		880	A s
dI/dt	Critical rate of rise of on-state current I_G =2xI_GT , tr ≤ 100 ns	F = 120 Hz	Tj = 125°C	50	A/µs
V_DSM/V_RSM	Non repetitive surge peak off-state voltage	tp = 10 ms	Tj = 25°C	V_DRM/V_RRM + 100	V
I_GM	Peak gate current	tp = 20 µs	Tj = 125°C	8	V
P_G(AV)	Average gate power dissipation		Tj = 125°C	1	W
T_stg T_j	Storage junction temperature range Operating junction temperature range			- 40 to + 150 - 40 to + 125	°C

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Symbol	Test Conditions	Quadrant		Value	Unit
I_GT (1)	V_D = 12 V R_L = 33 Ω	I - II - III IV	MAX.	50 100	mA
V_GT	V_D = 12 V R_L = 33 Ω	ALL	MAX.	1.3	V
V_GD	V_D = VDRM R_L = 3.3 kΩ T_j = 125°C	ALL	MIN.	0.2	V
I_H (2)	I_T = 500 mA		MAX.	80	mA
I_L	I_G = 1.2 I_GT	I - III - IV II	MAX.	70 160	mA
dV/dt (2)	V_D = 67 % V_DRM gate open T_j = 125°C		MIN.	500	V/µs
(dV/dt)c (2)	(dI/dt)c = 20 A/ms Tj = 125°C		MIN.	10	V/µs